Abstract

Electric field controlled magnetism is an exciting area of condensed matter physics to explore the device applications at ultra-low power consumption compared to the conventional current controlled or magnetic field controlled devices. In this study, an attempt was made to demonstrate electric field controlled magnetoresistance (MR) in a tri-layer structure consisting of La0.67Sr0.33MnO3 (LSMO) (40 nm)/SrTiO3 (10 nm)/LSMO (10 nm) grown on a 500-μm-thick BaTiO3 (001) (BTO) single crystal substrate by pulsed laser deposition technique. Epitaxial growth of the trilayer structure was confirmed by x-ray diffraction measurements. Jumps observed in the temperature-dependent magnetization curve at around the structural phase transitions of BTO ensure the strain-mediated magnetoelectric coupling between LSMO and BTO layers. A significant change in MR of this structure in applied electric fields does not show any polarity dependence. The findings are related to the lattice strain-mediated magnetoelectric coupling in ferromagnetic LSMO/ferroelectric BTO heterostructures.

Highlights

  • INTRODUCTIONThermal means.[12,13,14] strain-mediated ME coupling and the associated effects have a greater scope to understand the rich interface physics involved

  • Magnetoelectric (ME) multiferroics consisting of ferromagnetic (FM) and ferroelectric (FE) materials are of immense interest due to their potential applications at room temperature.[1,2,3] the ME materials offer additional degrees of freedom to manipulate the magnetization and the electric polarization as they are amenable for cross-coupling such as the polarization altered by a magnetic field and magnetization by an electric field.[4]

  • To grow the epitaxial tri-layer structure of LSMO/STO/LSMO, the growth conditions for each material layer viz., LSMO and STO were optimized on STO (100) single crystal substrates separately

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Summary

INTRODUCTION

Thermal means.[12,13,14] strain-mediated ME coupling and the associated effects have a greater scope to understand the rich interface physics involved. BaTiO3 (BTO) single crystal substrate was chosen as the ferroelectric layer. BTO exhibits three different ferroelectric phase transitions: a cubic phase to tetragonal (T) transition at 393 K, T-phase to orthorhombic (O) at 278 K, and O-phase to the rhombohedral (R) structure at 183 K.15. La0.67Sr0.33MnO3 (LSMO) oxide was chosen as a ferromagnetic layer due to its room temperature ferromagnetic metallic (TC ∼ 360 K) behavior. Since the lattice parameters of all the three material are nearly the same, epitaxial growth of the trilayer structure on BTO can be expected to have effective strain transfer across the heterointerfaces.[16]

EXPERIMENTAL
RESULTS AND DISCUSSIONS
CONCLUSION
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