Abstract
We investigate the effects of strain on the electronic and magnetic properties of ReS2 monolayer with sulfur vacancies using density functional theory. Unstrained ReS2 monolayer with monosulfur vacancy (VS) and disulfur vacancy (V2S) both are nonmagnetic. However, as strain increases to 8%, VS-doped ReS2 monolayer appears a magnetic half-metal behavior with zero total magnetic moment. In particular, for V2S-doped ReS2 monolayer, the system becomes a magnetic semiconductor under 6% strain, in which Re atoms at vicinity of vacancy couple anti-ferromagnetically with each other, and continues to show a ferromagnetic metal characteristic with total magnetic moment of 1.60μB under 7% strain. Our results imply that the strain-manipulated ReS2 monolayer with VS and V2S can be a possible candidate for new spintronic applications.
Published Version
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