Strain-induced grain boundary migration in {112} 〈111〉/{100} 〈001〉 and {123} 〈634〉/{100} 〈001〉 aluminum bicrystals

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Abstract {1 1 2} 〈1 1 1〉/{1 0 0} 〈0 0 1〉 and {1 2 3} 〈6 3 4〉/{1 0 0} 〈0 0 1〉 bicrystals were deformed by plane strain compression at a true strain of 0.34 at room temperature and annealed at 400 °C for 180 s. Both bicrystals showed the occurrence of strain-induced grain boundary migration (SIBM) along the original grain boundary. {1 0 0} 〈0 0 1〉 recrystallized areas formed by SIBM invaded the {1 1 2} 〈1 1 1〉 crystal and the {1 2 3} 〈6 3 4〉 crystal, being the adjacent crystals. The migration distance of the SIBM boundary from the original position of the grain boundary was found to be larger in the {1 1 2} 〈1 1 1〉/{1 0 0} 〈0 0 1〉 bicrystal than in the {1 2 3} 〈6 3 4〉/{1 0 0} 〈0 0 1〉 bicrystal. The difference in the migration distance is mainly because of the differences in stored energy between the component crystals, which are the dominant factor in nucleation by bulging of the grain boundary and growth by migration of the SIBM boundary. The effect of grain boundary character on SIBM is small.