Strain-induced Changes in the Electronic Structure of Graphene

Abstract

We observed the splitting of the Raman 2D band of single layer graphene under uniaxial strain. As the strain increases, the peak position of the G band redshifts and the G band splits into two peaks, G+ and G−. We can identify the crystal orientation of the graphene sample with respect to the strain direction using polarization analysis of the G band. In addition, the 2D band also redshifts and splits into two peaks as strain is applied. Since the 2D band reflects the electronic band structure of graphene near the K points through the double resonant Raman scattering process, the strain‐induced changes of the 2D band reflect changes in both the phonon frequencies and the electronic band structure.