Abstract
The double-heterostructure optoelectronic switch (DOES) has been demonstrated as a strained layer single quantum well laser. Broad area laser devices exhibited the lowest threshold currents (77 A/cm2 for a 2000 μm device length) ever reported for DOES devices. The devices had ideal electrical switching characteristics of 7.2 V and 1.0 mA/cm2 at the switching condition and 1.6 V and 0.4 A/cm2 at the holding condition. The switching and holding currents are also the lowest reported for any DOES device. For the lasers, the loss was measured to be 7.5 cm−1 and an external efficiency as high as 0.6 W/A was measured for a 400 μm device length.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
