Electrical and optical switching characteristics of the single-quantum-well DOES laser

Abstract

Experimental results are presented for the GaAs/AlGaAs single-quantum-well DOES (double heterostructure optoelectronic switch) laser. Switching data are reported for the three-terminal structure in which inversion channel contact is made via a self-aligned implant. They show full control of a 12-V switching characteristic with an input current of only 0.1 A/cm/sup 2/. Optical switching of one edge emitting laser was demonstrated with the optical output of another identical device. Switching energies as low as 0.15 fJ/ mu m/sup 2/ were measured using an integration time of 600 ps and a voltage of 6.7 V. The results are modeled using a new approach to describe the switching characteristics of the device. Good agreement between experimental and theoretical characteristics is shown, giving support to the new theoretical description of the device. >