Abstract
The efficiency of indium phosphide solar cells might be improved by a wide-band-gap window layer. In this work we calculate the performance of InP solar cells with a strained (pseudomorphic) In0.40Al0.60As window layer. Calculations show that the efficiencies of baseline and optimized p+n cells are increased to more than 22% and 24% (AM0, 25 °C), respectively, for In0.40Al0.60As window layer of 10 nm thickness. Comparatively little improvement is found for n+p cells.
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