Abstract
Strain state of InAlAs/InP structures subjected to annealing under high hydrostatic pressure was investigated by X-ray diffraction methods. The InxAl1–xAs (0.50 ≤ x ≤ 0.53) layers were grown on the (001) oriented InP substrates by molecular beam epitaxy. Due to differences in lattice parameters of the compounds it was possible to induce tensile as well as compressive strains in InxAl1–xAs layers by suitable changes of x-value. Fully and partially strained layers were studied. The high temperature-high hydrostatic pressure treatment was performed for 1 hour at 670 K under 1.2 GPa argon hydrostatic pressure. Annealing under high pressure treatment results in defect and strain changes of thin layer structures. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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