Abstract
GaAs1−xBix was grown on GaAs and InGaAs underlayers to determine the effect of global strain on bismuth (Bi) incorporation. Reducing compressive strain aids in Bi incorporation and results in higher Bi content films by preventing Ga-Bi surface droplet formation. A maximum Bi fraction of x = 0.088 was achieved in a 100 nm film on an In0.105GaAs buffer layer, a 24% relative improvement compared to layers grown on GaAs. Increasing Bi flux further did not result in incorporations past x = 0.088 on In0.105GaAs and strain could not be manipulated to incorporate more bismuth. Strain stabilization is thought to lessen Bi rejection and segregation, which increases the overall Bi content and yields homogenous films. The use of strain compensating layers can enable x = 0.06–0.09 content pseudomorphic GaAs1−xBix films with uniform composition at thicknesses relevant for optoelectronic devices.
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