Abstract
The effects of antimony (Sb) and bismuth (Bi) incorporation into CIGS thin films and solar cells have been investigated. 10~50 nm-thick Sb or Bi thin layers were deposited onto Mo-coated sodalime glass (SLG) and SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -coated SLG substrates by vacuum evaporation. CIGS thin films were then deposited by three-stage process at substrate temperatures of 400-550°C. The enhanced grain growth of CIGS thin films was observed, and the open-circuit-voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> ) and hence the conversion efficiency improved by the Sb (Bi) incorporation only when the SLG substrates were used. However, almost no effect was observed when the alkali barrier SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> layer was deposited on SLG substrates. These results suggest that the benefit by the Sb (Bi) incorporation does not occur by itself, but is a synergistic effect together with the sodium diffused from SLG.
Published Version
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