Abstract
A brief review is presented for our new approach in equilibrium theory for strain relaxation in metastable heteroepitaxial semiconductor structures, one which includes the elastic interaction between straight misfit dislocations and the lattice mismatch accommodation by tetragonal distortion of the cubic lattice cells. This approach provides an equilibrium theory which correctly predicts critical strained layer thicknesses and completely describes the strain relief via plastic flow and the phenomenon of work hardening in lattice mismatched epilayers. Experimentally observed values of critical layer thickness and strain relief are discussed and compared with our theoretical predictions.
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