Abstract
The accommodation of lattice mismatch at heterojunctions grown by back‐ melting and subsequent regrowth was investigated employing the system. Single crystals of either or served as the one component (substrate) of the heterojunctions and the regrown part was an alloy of the general formula . The lattice mismatch at the heterojunction was varied by varying the composition of the regrown alloy. It was found that the accommodation of the lattice mismatch takes place by the generation of dislocations the number of which is consistent with a simple linear lattice model.
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