Abstract
Strain relaxation behavior of molecular beam epitaxy grown compositionally graded Si 1 − x Ge x epilayers on Si(001) at 750°C has been investigated by using a high-resolution X-ray reciprocal space mapping technique. The depth profiles of the residual strain and the density of misfit dislocations of the samples were determined and a comparison with a theoretical model [J. Tersoff, Appl. Phys. Lett. 62 (1993) 693] is presented.
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