Abstract
The degree of strain relaxation via a formation of misfit dislocation has been calculated in single Si1-xGex/Si (001) epilayers grown at 640°C, by gas-source molecular beam epitaxy. The scale of strain relief via misfit dislocation was below 22% for Ge content x≤0.15. However, in the case of growth temperature of 550°C. the degree of strain relaxation in 270 nra single epilayer structures was 9% via misfit dislocation formation with negligible relaxation by surface undulation. As growth temperature decreased from 640°C to 550°C with higher Ge content (x=0.22), the mode of strain relaxation appears to have changed from one of misfit dislocation and surface undulation mechanism to that of predominant misfit dislocation formation.
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