Abstract
The effects of strain rate on material deformation and tribology behavior of 4H‐SiC are studied with high speed scratching tests, which represent typical processing modes of SiC wafers such as abrasive grinding/polishing. The results show that higher scratching speeds tend to induce more surface defects at the same scratching depth, which leads to the occurrence of ductile-to-brittle transition at smaller scratching depths. The relationship between the strain rate and scratching stress is analyzed, based on which a novel material model of 4H‐SiC is proposed considering the strain rate effect. The research reflects a close correlation between scratching speed-dependent stain rate and material deformation behavior of 4H‐SiC, and it can provide guidance for process optimization during manufacturing of 4H‐SiC components.
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