Abstract
Abstract Adsorbed atoms (adatoms) and vacancies have a significant role to play in the physics of surfaces and the mechanisms of film growth on a substrate. This paper investigates the effect of applied or residual strain on the energetic interaction between pairs of adatoms and vacancies. The analysis is based on a continuum-level point-defect model, where adatoms and vacancies have strain-dependent properties. Atomistic calculations are used to evaluate the defect properties for Si(111). The result is used as input for the defect model in order to investigate the strength and character of the interaction versus strain, separation distance, and relative orientation of the defects. It is found that strain may cause the defects to align in certain direction and modulate their interaction between repulsion and attraction, providing a mechanism for controlled building of nanostructures.
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