Abstract
Strain is routinely used in state-of-the-art semiconductor devices in order to improve their electrical performance. Here we present experimental strain measurements obtained by different transmission electron microscopy (TEM) based techniques. Dark field electron holography, nanobeam electron diffraction (NBED) and high angle annular dark field scanning electron microscopy (HAADF STEM) are demonstrated. In this paper we demonstrate the spatial resolution and sensitivity of these different techniques on a simple calibration specimen where the accuracy of the measurement can easily be assessed.
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