Abstract
A study is reported of the structure of photoreflectance (PR) spectra in the vicinity of the E0 transition from thin (d=1–5 µm) n-GaAs and n-InP films (n=1016–1017 cm−3) grown epitaxially on Si(001) substrates. A quantitative analysis of the spectra involving multi-component fitting shows that the electronic optical transition from the {3/2;±1/2} subband provides a dominant contribution to the intermediate-field electromodulation component in both systems. The splitting observed in the GaAS/Si PR spectra near the main peak are accounted for not by the strain-induced valence-band splitting but rather by a spectral superposition of the intermediate-field component due to the {3/2;±1/2} subband with a low-energy excitonic component. The analytically established transition energy E 0 3/2;±1/2 is used to calculate biaxial strains in epitaxial films.
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