Abstract
Abstract We report preparation of Vanadium dioxide (VO2) ultrathin films on hexagonal boron nitride (hBN), which is a typical two-dimensional material, to show clear Metal -Insulator transition owing to weak van der Waals interaction at their surface. It is confirmed that VO2 films on hBN with the thickness ranging from 10 to 40 nm exhibit bulk like Metal -Insulator transition without degradation by using the Raman scattering spectroscopy and electric transport measurements. These results are demonstrating the importance of 2D material nature of hBN for producing the strain-free oxide thin films.
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