Abstract
AbstractGenerating single photons in the telecommunication wavelength range from semiconductor quantum dots (QDs) and interfacing them with spins of electrons or holes is of high interest in recent years, with research mainly focusing on indium‐based QDs. However, there is not much data on the optical and spin properties of gallium antimonide (GaSb) QDs, despite it being a physically rich system with an indirect to direct bandgap crossover in the telecom wavelength range. This work investigates the (quantum‐) optical properties of GaSb QDs, which are fabricated by filling droplet‐etched nanoholes in an aluminum gallium antimonide (AlGaSb) matrix. Photoluminescence (PL) features from isolated and highly symmetric QDs are observed that exhibit narrow linewidth in the telecom S‐band and show an excitonic fine structure splitting of up to µeV. Moreover, time‐resolved measurements of the decay characteristics of an exciton are performed and the second‐order photon autocorrelation function of the charge complex is measured to , revealing clear antibunching and thus proving the capability of this material platform to generate non‐classical light.
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