Strain evaluation in Ge and Sn implanted Si layers with laser and rapid thermal annealing

Abstract

Strain technology has been widely employed to enhance the performance of MOSFETs. Recently, it has been desired that Sn as a stressor, is implanted into channel region in MOSFETs for compressive strain introduction since Sn can induce lager compressive strain than Ge. In this study, evaluation of strain in Si layers annealed with laser or rapid thermal annealing (RTA) after Ge and Sn ion implantation was carried out. As a result, a SiGeSn layer was formed only after the RTA for the Sn-implanted SiGe. Furthermore, it was confirmed the induced strain for the Sn-implanted SiGe after the RTA was more compressive than that for the Sn-implanted SiGe after the laser-annealing, resulting in the lower sheet resistance for the Sn-implanted SiGe after the RTA than that for the Sn-implanted SiGe after the laser-annealing.