Abstract
The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm−3 as well as an I ON /I OFF ratio of approximately 105 and ideality factor (n) approximately 1.2–1.5 was achieved with LTA. However RTA revealed very high I ON /I OFF ratio approximately 107, and n close to 1. Non ideal behavior in LTA diodes is attributed to existence of deep level defects in the junction, contributing to leakage current. Meanwhile ideal behavior of RTA diodes is due to removal of defects in the junction during the high thermal budget.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
