Abstract
We investigated the effects of epitaxial strain on the anion composition, crystal structure, and electrical transport properties of topotactically hydrogen substituted SrTiOxHy epitaxial thin films grown on (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(001) (LSAT), LaSrAlO4(001) (LSAO), and DyScO3(110) (DSO) substrates. Hydrogen substitution for oxygen (y ≈ 3 − x) was confirmed by X-ray diffraction measurements, elastic recoil detection analysis, and energy dispersive X-ray spectroscopy. Tensile-strained SrTiOxHy/DSO films exhibited a higher hydrogen content (y = 0.87) than compressive-strained SrTiOxHy/LSAT films (y = 0.20) and almost relaxed SrTiOxHy/LSAO films (y = 0.56) after a reaction with CaH2 at 500 °C for 72 h, probably owing to enhanced oxygen diffusion under tensile strain. Metallic conduction was observed in the SrTiOxHy thin films with a low hydrogen content (y = 0.10 and 0.16 on LSAT, y = 0.20 on LSAO, and y = 0.40 on DSO), while further hydrogen substitution (y = 0.56 on LSAO and y = 0.57 and 0.87 on DSO) induced insulating behavior at low temperatures. Furthermore, comparing SrTiOxHy/LSAO (y = 0.56) and SrTiOxHy/DSO (y = 0.57) films revealed that the carrier activation ratio is drastically reduced by tensile strain. These results demonstrate the potential to strain-engineer chemical and physical properties of transition metal oxyhydride thin films.
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