Manipulating the magnetic and electric transport properties of La0.7Sr0.3MnO3 epitaxial thin film through ionic liquid-gated technology

Abstract

Reversible manipulation of magnetic and electric transport properties by electrical means in perovskite transition metal oxides is of paramount importance in modern condensed matter physics and generates promising application prospects in electronic devices. However, the conventional method of field-effect transistor structure presents a huge limitation due to its poor ability to modulate the exceedingly high carrier density of about 1014−1015 cm−2. In this study, La0.7Sr0.3MnO3 (LSMO) epitaxial thin films with tensile and compressive strain states were obtained by growth on different single-crystal substrates. Compared with the LSMO thin film under tensile strain, the compressed LSMO thin film possesses more oxygen vacancies, a higher resistance and a smaller magnetization. In addition, the structural phases, magnetic and electric transport properties in both LSMO thin films were also manipulated by the ionic liquid-gated method. The LSMO thin film under compressive strain shows easier access to the reversible control of the structural phase and magnetic & electrical transport properties than the LSMO thin film under tensile strain. The synergy of the above capabilities proves an effective and reversible route to manipulate the properties of perovskite transition metal oxides, providing tremendous potential in the design of multiple-state memories, neuromorphic transistors, and other multifunctional devices.