Abstract
We investigate the growth of strain-engineered low-density InAs bilayer quantum dots (BQDs) on GaAs by molecular beam epitaxy. Owing to increasing dot size and In composition of the upper QDs, low-density BQDs in a GaAs matrix with an emission wavelength up to 1.4 μm at room temperature are achieved. Such a wavelength is larger than that of conventional QDs in a GaAs matrix (generally of about 1.3 μm). The optical properties of the BQDs are sensitive to annealing temperature used after spacer layer growth. Significant decrease of integrated PL intensity is observed as the annealing temperature increases. At 10K, single photon emission from the BQDs with wavelength around 1.3 μm is observed.
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