Abstract
We investigate the growth of low-density(~4×108cm-2) InAs quantum dots (QDs) on GaAs by molecular beam epitaxy,with emission wavelength up to 1.3 µm at room temperature were achieved. The QDs density are sensitive to growth temperature,growth rate.The optical properties of the QDs annealing temperature used after spacer layer growth that is attributed to the suppressed In segregation from the QDs into the cap layer, reduced the strain in the QDs,significant decrease of integrated PL intensity was observed as the annealing temperature increases.
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