Strain effects, potential profiles, and electronic properties of InAs/GaAs coupled double quantum dots with a disk shape

Abstract

AbstractStrain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double quantum dots (QDs) were calculated by using a finite‐difference method (FDM) taking into account shape‐based strain effects. The shape of the InAs/GaAs coupled double QDs on the basis of the transmission electron microscopy image was modeled to be a truncated hemi‐ellipsoid. The interband transition energies from the ground electronic subband to the ground heavy‐hole band (E1‐HH1) in the InAs/GaAs coupled double QDs, as determined from the FDM calculations taking into account strain effects, were in qualitatively reasonable agreement with the excitonic peaks corresponding to the (E1‐HH1) interband transition energies at several temperatures, as determined from the temperature‐dependent photoluminescence spectra. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)