Interband transition energies and carrier distributions of CdxZn1−xTe/ZnTe quantum wires

Abstract

Interband transition energies and carrier distributions of the CdxZn1−xTe/ZnTe quantum wires (QWRs) were calculated by using a finite-difference method (FDM) taking into account shape-based strain effects. The shape of the CdxZn1−xTe/ZnTe QWRs was modeled to be approximately a half-ellipsoidal cylinder on the basis of the atomic force microscopy image. The excitonic peak energies corresponding to the ground electronic subband and the ground heavy-hole band (E1-HH1) at several temperatures, as determined from the FDM calculations taking into account strain effects, were in qualitatively reasonable agreement with those corresponding to the (E1-HH1) excitonic transition, as determined from the temperature-dependent photoluminescence spectra.