Strain Effect on the Structural and Electronic Properties of a Monolayer C4N4

Abstract

Abstract The first-principles calculations have been performed to examine structural, mechanical, and electronic properties at large stain for a monolayer C4N4, which was predicted as an anchoring promising material to attenuate shuttle effect in Li–S batteries stemming from its large absorption energy and low diffusion energy barrier. Our results show that the ideal strengths for C4N4 under tensile and pure shear deformation conditions reach 13.9 and 12.5 GPa at strain of 0.07 and 0.28, respectively. The folded five-membered rings and diverse bonding modes between carbon and nitrogen atoms enhances the ability to resist plastic deformation of C4N4. The orderly bond-rearranging behaviors under the weak tensile loading path along the [100] direction cause the impressive semiconductor-metal and inverse semiconductor-metal transition. The present results enrich the knowledge of the structure and electronic properties of C4N4 under deformations and shed light on exploring other two-dimensional materials under diverse loading conditions.