Abstract
A k⋅p model is developed to describe confined states in strained-layer heterostructures fabricated from III–V compounds and their alloys. Unlike the case of simple one-band models, the presence of intrinsic strain not only shifts the band edges but also modifies the effective masses associated with the individual bands. Results for InGaAs/GaAs and InGaAs/InP are presented. We show that the presence of strain can have significant influence on the electronic properties of these systems such as intersubband transition energies and the band offsets. The importance of strain effects on the determination of band offsets from optical data is discussed.
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