Abstract
A type-I semiconductor quantum well inherently consists of two quantum wells, one each in the conduction and valence bands. A new method to decouple and independently analyze these two wells is presented. The interband 3e-3h and 1e-1h transitions are decoupled by using the commonly observed 1e-3h transition. The resulting intraband 3h-1h and 3e-1e transitions are used to independently estimate the band offset and carrier mass in each well. Decoupling of the wells in each band adds a degree of freedom to the problem and allows an independent calculation of the average well width to be made. In addition, an accurate linear approximation is developed for use in place of the usual trigonometric solution to the quantum-well problem. For Al0.30Ga0.70As/GaAs quantum wells, results are found to be highly consistent with Qc =0.605, and m*hh =0.321 and m*e =0.0671 in the well.
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