Abstract
We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick InAs/AlSb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the InAs sublayer was equal to the compressive strain energy in the AlSb sublayer. For the four-constituent active region, as the compressive strain in the Ga0.65In0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped InAs/AlSb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of thickness 6 μm was grown on the GaSb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
