Abstract
Simple oxide heterostructures have been fabricated by growing multiferroic TbMnO3 thin film on Nb-1 wt %-doped SrTiO3 substrate. In addition to the beneficial rectifying characteristics in a temperature range from 350 to 30 K, the intriguing observation is that at constant reverse bias the current increases with decreasing temperature below 275 K. By analyzing the band diagram, the anomalous increasing current with decreasing temperature was ascribed to the strain-assisted tunneling current through TbMnO3∕Nb-doped p–n junctions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
