Abstract
AbstractIn order to get semi‐insulating GaN layers with a low dislocation density on sapphire, two kinds of Fe doping were explored by low pressure metalorganic vapour phase epitaxy (LP‐MOVPE): the modulation doping (MD) and the continuous doping (CD). The high crystalline quality and the semi‐insulating character are obtained in the case of the Fe‐MD layers. The effect of Fe doping on the strain was investigated in both kind of layers (MD and CD) by X‐ray diffraction, photoluminescence and reflectivity. The lattice parameters are functions of the iron doping level, whatever the doping mode. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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