Abstract
Phosphorene, one of the graphene counterparts, is believed to have promising potential to be utilized in nanoelectronics due to its significant properties. Phosphorene has a nonplanar puckered structure with high anisotropy, which enables the elastic strain or external field to tune its electronic structure. In this work, we propose a nanodevice model based on an armchair phosphorene nanoribbon (APNR) with normal-metal electrodes and study the tuning effect of elastic strain and electric field on the electronic transport properties. We first confirm that the APNR can be driven to be of metallic conduction with linear dispersion around the Fermi level, by applying a critical compressive strain. After applying a perpendicular electric field, the APNR turns out to be a band insulator. Furthermore, we calculate the dc conductance and density of states (DOS) of the nanodevice, where the APNR is connected to normal-metal electrodes. The numerical results show that in the absence of an electric field, the nanodevice possesses peak values of conductance and DOS at the Fermi level. Once the electric field is applied, a gap emerges around the Fermi level in the conductance, which suggests that the nanodevice is turned off by the external electric field. Our investigation on the present system could be useful in the development of a field-effect nanodevice based on monolayer phosphorene.
Highlights
Phosphorene, a monolayer of phosphorus atoms with the puckered structure, has attracted lots of attention due to its significant electronic properties in recent years.1 The successful synthesis of phosphorene triggered more interest in this material.2–7 Phosphorene is believed to be a very promising material for nanoelectronics applications, as more and more experimental results are reported
Due to the bandgap tuning effect of the electric field and the application of a field-effect nanodevice, we further investigate the electronic transport by applying electric field Ez perpendicular to the scitation.org/journal/adv the nanodevice with normal-metal electrodes, the dc conductance shows oscillations rather than perfect steps due to the interface scattering between the armchair phosphorene nanoribbon (APNR) and normal-metal electrodes
We propose an APNR nanodevice connected by normal-metal electrodes and investigate the electric field tunable transport properties
Summary
Phosphorene, a monolayer of phosphorus atoms with the puckered structure, has attracted lots of attention due to its significant electronic properties in recent years. The successful synthesis of phosphorene triggered more interest in this material. Phosphorene is believed to be a very promising material for nanoelectronics applications, as more and more experimental results are reported. Based on the Hamiltonian model, the tuning effects of the strain or electric field on electronic properties were studied. The edge dangling bonds of phosphorene can form intimate chemical bonding with the normalmetal electrode for charge transfer This edge contact configuration has a smaller physical separation of the interface and stronger orbital overlaps.. Numerical calculations are performed to investigate the strain and electric field tunable electronic transport in an armchair phosphorene nanodevice with edge contact normal-metal electrodes, based on the tight-binding approach, Green’s function, and Landauer–Büttiker theory. We first study the strain effect on the armchair phosphorene nanoribbon (APNR), and the results confirm that the APNR can be driven to be metallic under a critical compressive strain. We propose a nanodevice model, where the compressive APNR is connected to normal-metal electrodes, and applied a perpendicular electric field via a top gate. Our results may be useful in the application of field-effect nanodevices based on monolayer phosphorene
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