Abstract
The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur from semiconductor to metal in the APNRs. The negative differential resistance (NDR) behavior in the doped APNR system is robust with respect to the doping concentration and edge passivation type. However, their current peak positions and peak-to-valley ratio (PVR) values are correlated with doping concentration and edge passivation type. In particular, for the C, Si-doped APNRs, the low bias NDR behavior with the PVR (105–108) can be observed when doping concentration is low in the APNRs with the F and H edge passivation. These results may play an important role for the fabrication of future low power consumption nano-electronic devices.
Highlights
Since the graphene was firstly fabricated by mechanical exfoliation[1], many interesting electronic properties of the atomically thin two-dimensional (2D) materials have attracted considerable attentions[2,3,4,5,6,7,8,9,10,11,12,13,14,15]
In order to find out the modification of band structures affected by substitutional doping, Fig. 1(a)–(c) presents the band structures of the group IV atoms-doped 7-armchair phosphorene nanoribbons (APNRs) with all edge P atoms terminated by H atoms, where 7 is the number of P atoms across the ribbon width
The band structure of APNR with the Si/Ge atom displaces an edge P atom is illustrated in the Fig. 1(a)
Summary
Since the graphene was firstly fabricated by mechanical exfoliation[1], many interesting electronic properties of the atomically thin two-dimensional (2D) materials have attracted considerable attentions[2,3,4,5,6,7,8,9,10,11,12,13,14,15]. Few-layer phosphorene based field effect transistors have higher mobility and a high on/off ratio[29] Owing to these unique physical properties, the study of phosphorene and phosphorene nanoribbon (PNR) attracts a great of research interest for various device applications[30,31,32,33,34,35,36,37,38]. The edge passivation type can future modulate the NDR behaviors in the C-doped APNR-based devices
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