Abstract
The effect of strain accumulation in the InAs/InxGa1−xAs quantum dots (QDs) system was studied in this work. It was found that strain in the InxGa1−xAs layer accumulation in the QD layer. This effect resulted in a dramatic reduction of growth mode transition thickness of the QD layer. For InAs/In0.25Ga0.75As QDs, critical thickness is measured to be as low as 1.08 ML. The experimental results in this work highlight the importance of strain accumulation in the design and fabrication of QD-based devices with metamorphic buffer layer involved.
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