Abstract
The stopping properties of Mo and Mo2N films against As ions have been investigated using SIMS. The implantation of arsenic ions in Mo gives concentration profiles broader than the LSS theoretical predictions, with a tail showing penetration into the region beyond the peak concentration. The main cause of this is thought to be channeling occurring in some columnar grains with the <110> direction aligned with the tilted incident beam. The channeling effect depends on the ion dose and the preimplantation annealing temperature. The profiles in Mo2N also have an anomalous tail generated by channeling. The profile broadening in Mo2N is less than that in Mo.
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