Abstract
Rutherford backscattering spectrometry was used to investigate the near surface compositional changes and the internal layer variations of Si, CoSi 2 and TiSi 2 during 12 keV O 2 + bombardment with and without oxygen bleed-in. Experiments have been carried out with the angle of incidence between the sputter beam and the normal at 26 and 40°. The results show the incorporation of oxygen, leading to oxide formation, preferential sputtering of Si in the silicides and the formation of a surface oxide during oxygen flooding.
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