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Abstract
A basic understanding of the sputter induced artifacts during low energy oxygen ion beam bombardment is of great importance for a correct evaluation of the results of suptter depth profiling in SIMS. In this paper the sputter depth profiling of Si, CoSi 2 and TiSi 2 under normal oxygen bombardment has been investigated. With the combined sputter/RBS set-up and in combination with ex-situ XPS measurements, the oxidation and near-surface compositional changes in the transient region have been explained.
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