Stochastic memristive nature in Co-doped CeO2 nanorod arrays

Abstract

In this Letter, bipolar resistive switching characteristics of electrochemically deposited pure and Cobalt doped CeO2 nanorods architectures were reported. A conducting filament based model to address resistive switching process in these devices was proposed. Furthermore, the randomness in individual switching events and the prediction of switching probabilities were studied by imposing weak programming conditions. The present study offers insights into scrutinize the inherent stochastic nature in resistive switching characteristics within these devices rather than stressfully achieve high switching probabilities using excess voltage or time.