Stochastic effects in 11 nm imaging of extreme ultraviolet lithography with chemically amplified resists

Abstract

The resolution of extreme ultraviolet (EUV) lithography with chemically amplified resist processes has reached 16 nm (half-pitch). The development of chemically amplified resists is ongoing toward the 11 nm node. However, the stochastic effects are increasingly becoming a significant concern with the continuing shrinkage of features. In this study, the fluctuation of protected unit distribution caused by the stochastic effects during image formation was investigated assuming line-and-space patterns with 11 nm half-pitch. Contrary to expectations, the standard deviation of the number of protected units connected to a polymer after postexposure baking (PEB) did not differ from that for 16 nm half-pitch. The standard deviation after PEB increased with the effective reaction radius for deprotection and the initial standard deviation before PEB. Because of the severe requirements for resist processes, the stochastic effects in chemical reactions should be taken into account in the design of next-generation resists.