Abstract
Au substrate was prepared by Au evaporation on Si(111) surface. Au surface was composed of Au grains with typical diameter of about 50 nm with atomically flat terraces. TiO 2 nanostructures were created by electron gun evaporation of Ti while simultaneous dosing of high purity O 2 gas. The pressure of oxygen was kept at 5 · 10 − 8 mbar and controlled by means of residual gas analyzer (RGA). Scanning tunneling microscopy (STM) images showed that TiO 2 nanocrystallites had grown between Au grains in cavities between them. This may suggest that such spots are preferred TiO 2 nucleation sites. I– V curves measured above Au showed metallic properties while those measured above TiO 2 exhibit energy gap characteristics for semiconducting material.
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