Abstract

We performed scanning tunneling microscopy (STM) experiments on optimally doped Bi2Sr1.6Ln0.4CuO6+δ (Ln=La, Nd, and Gd) at 4.2K to explore the lanthanide ion dependence of the local density-of-states (LDOS) modulation. STM image at high bias voltage showed the structural superlattice modulation along the b-axis. At low bias voltage, we observed the LDOS modulation along the Cu–O–Cu direction in all materials. The period of the modulation was independent of the lanthanide ion substituted, and was about 5a0 (a0 is the lattice constant).

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