Abstract
The effect of hydrogen termination on Si(100)-2 × 1 surfaces upon Ag deposition at room temperature (RT) and high temperature (350°C) has been investigated by a scanning tunneling microscopy. The results are also compared with those on clean Si(100)-2 × 1 surfaces. When Ag was deposited at RT, small Ag clusters formed on the hydrogen-terminated surface, in contrast that scattered and relatively individual Ag atoms formed on a clean Si(100)-2 × 1 surface. As increasing the substrate temperature, the size of Ag clusters became larger and the shape gradually changed to rectangular, whose edges were parallel to [011] and [01 3 ] directions. Structural models for these surfaces are also proposed.
Published Version
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