Abstract
Spurred by the desire to control the pre-growth substrate morphology as well as the quality of epitaxial thin films several groups have investigated the effects of low-energy ion beam sputtering on the Si(001) surface morphology and growth kinetics. [1] To first order, low-energy sputtering can be understood as introducing surface vacancies which diffuse across terraces and annihilate at step edges and with adatoms. [2] The introduction of vacancy formation and diffusion as additional kinetic processes controlling surface morphology has led to interesting phenomenology, and the metaphor of vacancies as "anti-atoms" on the silicon surface is rather striking. For example, just as Si can be grown epitaxially on the Si(001) surface in a layer-by-layer growth mode, low-energy ion bombardment can result in the layer-by-layer removal of the surface atoms. [2]
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