Properties of aluminum films deposited by low energy and high density ion bias sputtering method using cusp magnetic field electrode

K Okutani,M Horiuchi,S Sasaki,M Kurogome,H Tateishi

doi:10.1109/vmic.1990.127880

Properties of aluminum films deposited by low energy and high density ion bias sputtering method using cusp magnetic field electrode

K Okutani, M Horiuchi + Show 3 more

https://doi.org/10.1109/vmic.1990.127880

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Publication Date: Jun 12, 1990

Citations: 3

Affiliation: Hitachi (Japan)

#Proper Selection Of Processing Parameters #Bias Sputtering Method + Show 8 more

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Abstract

To improve both aluminum film properties and step coverage in contact and via holes, a low-energy and high-density ion bombardment bias sputtering method at medium substrate temperature (under 400 degrees C) using a cusp magnetic field electrode was developed. Properties of aluminum films deposited under different conditions are evaluated to determine the correct substrate bias voltage (-50 V) and bias current (20 mA/cm/sup 2/). By proper selection of processing parameters, aluminum films with high

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