Stimulation of Photoactive Absorption of Sunlight in Thin Layers of Silicon Structures by Metal Nanoparticles

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This study is devoted to analysis by the method of modeling photoelectric processes of charge transfer in thin silicon structures with a p–n junction containing nanoparticles of various metals, their sizes, and volume distribution.The absorption and current–voltage (I–V) characteristics of thin-film silicon solar cells, which contain the metal nanoparticles localized on the surface dielectric antireflecting coating, in the emitter and base with high and low doping degree, and on the interfaces of these layers, are defined. As a basic method for research, the Sentaurus TCAD is chosen, which includes the Structure Device Editor, Sentaurus Device, Sentaurus Visual, and Sentaurus Workbench packages with wide capabilities for modelling silicon solar cells with a flat p–n junction. The absorption and I–V characteristics of photoelectric converters, containing metal nanoparticles in various thin layers of the structure, are determined by analyzing the computational results and discussing the physical nature of observable processes. The recommendations are offered for creating thin-film silicon plasmonic p–n junction solar cells with optimized sizes of metal nanoparticles, their distribution, and, hence, with improved efficiency of photoelectric conversion of energy. The expediency of creation of ultraviolet radiation detectors on the basis of thin-film silicon structures with metal nanoparticles is shown. The absorption and I–V characteristics of photoelectric converters, containing metal nanoparticles in thin layers of the dielectric coating, emitter, and base with high and low doping degrees and also on interfaces of these layers are compared. The most effective absorption of the solar spectrum in the region of the emitter up to the metallurgical border of the p–n junction and the best efficiency of photoelectric energy conversion of silicon solar cells are revealed. The optimum sizes of metals nanoparticles, regularities of their distribution, and depths of occurrence of the p–n junction for thin layers of crystalline silicon are defined. The recommendations for creation of third-generation thin-film silicon plasmonic solar cells and high-sensitivity photovoltaic detectors of ultra-violet radiation are developed.