Abstract
Stimulated terahertz emission owing to population inversion between exciton states in silicon crystals at intense interband photoexcitation is detected. The terahertz gain spectrum exhibits 13.7- and 15.5-meV lines, the gains of which reach 0.5 and 1 cm-1, respectively. The 13.7-meV line is due to the population inversion between highly excited states and the ground state of free excitons. The 15.5-meV line can be associated with the population inversion between the two-exciton and biexciton states. The terahertz gain values make it possible to expect the possibility of creating a new type of a terahertz laser on transitions between free excitons in silicon under interband photoexcitation.
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