Abstract
An intense short pulse laser propagating through a heavily doped degenerate semiconductor, parametrically excites a free carrier space charge mode and back scattered electromagnetic mode via free carrier nonlinearity. Landau damping and collisional damping of the decay waves determine the threshold for the instability. Above the threshold, the growth rate scales as γ∼(v0/2c)(εLωω0)1/2, where v0 is the free carrier oscillatory velocity, c is the velocity of light in vacuum, εL is the lattice permittivity, ω is the frequency of the space charge mode, and ω0 is the pump frequency.
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